Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.

FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).

A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary 0s and 1s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a 1 is encoded using the negative remnant polarization -Pr, and a 0 is encoded using the positive remnant polarization +Pr.In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the up or down orientation (depending on the polarity of the charge), thereby storing a 1 or 0. Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say 0. If the cell already held a 0, nothing will happen in the output lines. If the cell held a 1, the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the down side. The presence of this pulse means the cell held a 1. Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.
Ferroelectric RAM was proposed by MIT graduate student Dudley Allen Buck in his master's thesis, Ferroelectrics for Digital Information Storage and Switching, published in 1952. Development of FeRAM began in the late 1980s. Work was done in 1991 at NASA's Jet Propulsion Laboratory on improving methods of read out, including a novel method of non-destructive readout using pulses of UV radiation. Much of the current FeRAM technology was developed by Ramtron, a fabless semiconductor company. One major licensee is Fujitsu, who operates what is probably the largest semiconductor foundry production line with FeRAM capability. Since 1999 they have been using this line to produce standalone FeRAMs, as well as specialized chips (e.g. chips for smart cards) with embedded FeRAMs. Fujitsu produced devices for Ramtron until 2010. Since 2010 Ramtron's fabricators have been TI (Texas Instruments) and IBM. Since at least 2001 Texas Instruments has collaborated with Ramtron to develop FeRAM test chips in a modified 130 nm process. In the fall of 2005, Ramtron reported that they were evaluating prototype samples of an 8-megabit FeRAM manufactured using Texas Instruments' FeRAM process. Fujitsu and Seiko-Epson were in 2005 collaborating in the development of a 180 nm FeRAM process. In 2012 Ramtron was acquired by Cypress Semiconductor. FeRAM research projects have also been reported at Samsung, Matsushita, Oki, Toshiba, Infineon, Hynix, Symetrix, Cambridge University, University of Toronto, and the Interuniversity Microelectronics Centre (IMEC, Belgium).

The Global Ferroelectric RAM Market was valued at xxx million USD with a CAGR xx% from 2018-2022. Subsequently, it will touch xxx million USD in 2023 with a CAGR xx % from 2023 - 2030.

In the global Ferroelectric RAM Market, This report focuses particularly in North America, South America, Europe and Asia-Pacific, and Middle East and Africa. This report classifies the Market on the basis of application, type, regions, and manufactures.

In Market segmentation by manufacturers, the report covers the following companies-

Cypress Semiconductor
Fujitsu
Texas Instruments
IBM
Infineon
In Market segmentation by geographical regions, the report has analysed the following regions-
North America (USA, Canada and Mexico)
Europe (Germany, France, UK, Russia and Italy)
Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
South America (Brazil, Argentina, Columbia etc.)
Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)

In Market segmentation by types :

Serial Memory
Parallel Memory
Others
In Market segmentation by applications :

Smart Meters
Automotive Electronics
Medical Devices
Wearable Devices

The research provides answers to the following key questions:
• What is the estimated growth rate and Market share and size of the Ferroelectric RAM Market for the forecast period 2023 - 2030?
• What are the driving forces in the Ferroelectric RAM Market for the forecast period 2023 - 2030?
• Who are the prominent Market players and how have they gained a competitive edge over other competitors?
• What are the Market trends influencing the progress of the Ferroelectric RAM industry worldwide?
• What are the major challenges and threats restricting the progress of the industry?
• What opportunities does the Market hold for the prominent Market players?
Any special requirements about this report, please let us know and we can provide custom report.

Note – In order to provide more accurate market forecast, all our reports will be updated before delivery by considering the impact of COVID-19.

Research Methodology

The Market Research Update offers technology-driven solutions and its full integration in the research process to be skilled at every step. We use diverse assets to produce the best results for our clients. The success of a research project is completely reliant on the research process adopted by the company. Market Research Update assists its clients to recognize opportunities by examining the global market and offering economic insights. We are proud of our extensive coverage that encompasses the understanding of numerous major industry domains.

Market Research Update provide consistency in our research report, also we provide on the part of the analysis of forecast across a gamut of coverage geographies and coverage. The research teams carry out primary and secondary research to implement and design the data collection procedure. The research team then analyzes data about the latest trends and major issues in reference to each industry and country. This helps to determine the anticipated market-related procedures in the future. The company offers technology-driven solutions and its full incorporation in the research method to be skilled at each step.

The Company's Research Process Has the Following Advantages:

1. Information Procurement

The step comprises the procurement of market-related information or data via different methodologies & sources.

2. Information Investigation

This step comprises the mapping and investigation of all the information procured from the earlier step. It also includes the analysis of data differences observed across numerous data sources.

3. Highly Authentic Source

We offer highly authentic information from numerous sources. To fulfills the client’s requirement.

4. Market Formulation

This step entails the placement of data points at suitable market spaces in an effort to assume possible conclusions. Analyst viewpoint and subject matter specialist based examining the form of market sizing also plays an essential role in this step.

5. Validation & Publishing of Information

Validation is a significant step in the procedure. Validation via an intricately designed procedure assists us to conclude data-points to be used for final calculations.